IRTG 2022 "ATUMS" - Project 9.

Project 9. Electronic properties of field effect devices based on organically functionalized inorganic nanostructures

TUM: Stutzmann, Rieger, Tornow
UofA: Veinot, Hegmann
Students: Felix Eckmann, Theresa Hoffmann


Whereas during the first ATUMS phase we were mainly focused on the basic characterization of optical, structural and electronic properties of functionalized Si-based nanostructures, we will now move forward to the development of prototype devices produced by top-down nanotechnology using hybrid systems of inorganic semiconductor nanostructures (Si- and Ge-nanoparticles, nano-sheets and clusters; other structured semiconductors e.g. nano-wires) in combination with functional organic layers. Aimed prototype devices are thin film field effect transistors (FETs), sensors, memristors and capacitive gates with high-k dielectrics, which we can build thanks to access to the up-to-date semiconductor device technologies e.g. optical and e-beam lithography, nano-imprint lithography, metallization, chemical and reactive ion etching, focused ion beam patterning, electron and He-ion microscopy. Correlation of the macroscopic electronic transport phenomena of these devices in the dark and under illumination with the properties of the nanoparticles, the functional molecules and the organic matrices employed will be assessed by a broad range of characterization methods and used as a feedback for the development of improved materials and devices.