TUM: Tornow, Boekhoven, Rieger
UofA: Gibbs, Veinot
Studens: Sabrina Artmeier
Controlled bottom–up self-assembly of electrical sub-units into higher-order, three-dimensional structures is a promising approach towards high density integrated, miniaturized 3D schemes potentially involving also disparate electronical functions. Within the first ATUMS project phase different strategies for the directed self-assembly of nanocubes (Si, Ag, oxides) have been successfully investigated, and their electrical functionality has been demonstrated. Based on their complementary functional binding entities, nanoparticles may assemble into specific aggregates, e.g. dimers, rods, etc. The aggregation and disaggregation kinetics may be coupled to chemical reaction networks (see Project 8), allowing the formation of electronic circuits with a lifetime dictated by chemical reaction rates.
Our major focus will be the controlled, massively parallel bottom-up preparation of basic electronic device structures starting from side-specific-functionalized, mostly non-spherical, inorganic nanoparticles. As the major electronic application it is envisaged to use mainly composite metal-dielectric aggregates for memristive device units, which reveal a hysteretic resistance switching by the reversible formation of conductive filaments. Depending on the impact of external physical or chemical triggers on the switching characteristics, also novel ‘memristive sensing’ schemes shall be developed.